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| savantic semiconductor product specification silicon pnp power transistors 2sb744 2SB744A d escription with to-126 package complement to type 2sd794/794a excellent h f e linearity applications for audio frequency power amplifier and general purpose applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v 2sb744 -45 v ceo collector-emitter voltage 2SB744A open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -3 a i cm collector current-peak -5 a i b base current -0.6 a t a =25 1 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2sb744 2SB744A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sb744 -45 v (br)ceo collector-emitter breakdown voltage 2SB744A i c =-10ma; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-1.5a ;i b =-0.15a -0.5 -2.0 v v besat base-emitter saturation voltage i c =-1.5a ;i b =-0.15a -0.8 -2.0 v i cbo collector cut-off current v cb =-45v; i e =0 -1 a i ebo emitter cut-off current v eb =-3v; i c =0 -1 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 30 120 h fe-2 dc current gain i c =-0.5a ; v ce =-5v 60 100 320 f t transition frequency i c =-0.1a ; v ce =-5v 45 mhz c ob collector output capacitance f=1mhz ; v cb =-10v;i e =0 60 pf h fe-2 classifications r o y 60-120 100-200 160-320 savantic semiconductor product specification 3 silicon pnp power transistors 2sb744 2SB744A package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2sb744 2SB744A |
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